发明名称 METHOD OF FORMING SUBSTRATE STRUCTURE AND METHOD OF MANUFACTURING DEVICE COMPRISING THE SAME
摘要 PURPOSE: A method for forming a substrate structure and a method for manufacturing a device including the same are provided to improve the electrical characteristic and the mechanical characteristic by filling insulating materials, semiconductor materials, or metal in a concave part. CONSTITUTION: A first material layer is formed on a substrate(1) including a concave part(2). The material layer on a part around the concave part is eliminated using a second material which reacts with a first material. A deposition film(40) is formed from the first material layer using a third material which reacts with the first material. The first material is raw material precursor, and the third material is reaction precursor.
申请公布号 KR20100109884(A) 申请公布日期 2010.10.11
申请号 KR20100089847 申请日期 2010.09.14
申请人 SYNOS TECHNOLOGY, INC. 发明人 LEE, SANG IN
分类号 H01L21/76 主分类号 H01L21/76
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