METHOD OF MANUFACTURING A MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a memory device is provided to secure a trapping film for electric charges with a uniform thickness by eliminating the exposed part of a pre-trapping film for electric charges through an isotropic etching process. CONSTITUTION: A tunnel insulating film(140) is formed on a substrate(100). A pre-trapping film for electric charges(154) is formed on the tunnel insulating film. An etching stop film is formed to expose a part of the pre-trapping film for the electric charges. The exposed part of the pre-trapping film for the electric charges is eliminated to form a trapping film for the electric charges with a uniform thickness. A dielectric film is formed on the trapping film for the electric charges. A gate is formed on the dielectric film.