SEMICONDUCTOR scintillation material based on ACTIVATED zinc selenide AND METHOD FOR producing thereof

摘要

The invention relates to the field of scintillation technique and can be used for producing semiconductor scintillation materials used to register low-energy (10-50 keV) ionizing radiation. Indium or gallium, or aluminum are activating additives in the semiconductor scintillation material based on activated zinc selenide. A method for producing semiconductor scintillation material based on activated zinc selenide includes preliminary preparation of raw materials by crushing previously grown activated zinc selenide crystal and crystal growing from the melt under the pressure of inert gas. The invention provides for the producing of new semiconductor scintillation materials with maximum radiation at 590 nm, decreasing to 0.2 % after 5 ms of afterglow level while maintaining the light output at the level of 120-130 % of the cesium iodide, activated by thallium.