NEGATIVE-TYPE PHOTORESIST COMPOSITION, METHOD OF FORMING A PATTERN AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE PHOTORESIST COMPOSITION

摘要

PURPOSE: A formation method of a pattern, and a negative photoresist composition are provided to improve the etch-resistance, the line width roughness, and the pattern profile by curing a polymer without a heating process. CONSTITUTION: A formation method of a pattern comprises the following steps: spreading a polymer insoluble for a developer by being cross-linked with acid, including an alkoxy silyl group, and a negative photoresist composition including a photo acid generator and a solvent, to form a photoresist film on a substrate; irradiating lights to a first portion of the photoresist film, to cure the polymer in the first portion by the cross-linking of the alkoxy silyl group; and removing a second portion by applying the developer to the photoresist film, and forming the photoresist pattern.