发明名称 SEMICONDUCTOR MEMORY DEVICE HAVING SWAP FUNCTION FOR DQ PADS
摘要 PURPOSE: A semiconductor memory device is provided to ensure the reliability in the lead-function of a state-resistor regardless of the kinds of packages to which the semiconductor memory device is applied. CONSTITUTION: A command register(2) applies a command signal to an address controlling part(6) and a read/write controlling part(8). An address buffer(4) responds to a clock(CK/CKB) using an applied address(ADD). The address controlling part generates an address in order to access data. A row decoder(10) is connected with the address controlling part and a memory core(14). A column decoder(12) outputs a column selecting signal in order to select bit-lines for memory cells.
申请公布号 KR20100108697(A) 申请公布日期 2010.10.08
申请号 KR20090026833 申请日期 2009.03.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 NOH, KWANG SOOK
分类号 G11C5/06;G11C5/02;G11C11/40;G11C11/409 主分类号 G11C5/06
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