FABRICATION METHOD OF LIGHT EMITTING DIODE

摘要

PURPOSE: A fabrication method of a light emitting diode is provided to prevent the crack of a sacrificial substrate by suppressing the difference of coefficients of thermal expansion between a supporting substrate and the sacrificial substrate. CONSTITUTION: Compound semiconductor layers are formed on a sacrificial substrate. The compound semiconductor layers includes a first conductivity type compound semiconductor layer(55), an active layer(57), and a second conductive type compound semiconductor layer(59). The first and second supporting substrates(71,81) are bonded on the compound semiconductor layers. The first supporting substrate is interposed between the sacrificial substrate and the second supporting substrate. The difference of coefficients of thermal expansion between the second supporting substrate and the sacrificial substrate is smaller than that between the first supporting substrate and the sacrificial substrate.