DETERGENT FOR LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN USING THE SAME

摘要

PURPOSE: A cleaning solution for a lithography, and a formation method of a resist pattern using thereof are provided to effectively control the generation of a CD shift without interfering the prevention of a pattern collapse. CONSTITUTION: A cleaning solution for a lithography contains an anionic surfactant, an amine compound, and water. A formation method of a resist pattern comprises the following steps: forming a resist film on a substrate; selectively exposing the resist film by inserting a mask pattern; heating the resist film; alkali developing the resist film to form the resist pattern; and contacting the resist pattern with the cleaning solution.