CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A capacitor of a semiconductor device and a method for forming the same are provided to reduce an etching time by performing the etching for forming a metal wiring. CONSTITUTION: A capacitor(C) has a storage node(SN), a dielectric layer(110), and the lamination structure of a plate node(PN). The storage node is formed with TiN film. The dielectric layer is a high dielectric layer or a ferroelectric film. The plate node is formed with an Ti(1-x) AlxN film,: X is within 0 and 1. The Ti(1-x) AlxN film is formed through CVD(Chemical Vapor Deposition).