| 摘要 |
<p>A process is provided for making a photovoltaic device comprising a silicon substrate comprising a p-n junction, the process comprising the steps of: forming an amorphous silicon carbide antireflective coating over at least one surface of the silicon substrate by chemical vapor deposition of a composition comprising a precursor selected from the an organosilane, an aminosilane, and mixtures thereof, wherein the amorphous silicon carbide antireflective coating is a film represented by the formula Si v C x N u H y F z , wherein v+x+u+y+z = 100%, v is from 1 to 35 atomic%, x is from 5 to 80 atomic%, u is from 0 to 50 atomic %, y is from 10 to 50 atomic% and z is from 0 to 15 atomic%.</p> |
