| 摘要 |
<p>PURPOSE: A light emitting diode and a method for manufacturing a light emitting diode are provided to reduce the contact resistance to p electrode by forming a double layer containing p type gallium arsenide(GaAs) layer having a rapid response characteristic. CONSTITUTION: N type gallium nitride layer(201) is formed on a substrate(200). An active layer(203) is formed on the gallium nitride layer. P type gallium nitride layer(205) is formed on the active layer. A buffer layer includes an arsenic(As) formed on the p type gallium nitride layer. P electrode is formed on the buffer layer. The buffer layer is p type gallium arsenide layer(207). The buffer layer is p type gallium arsenide layer and p type gallium arsenic nitride layer.</p> |
