| 摘要 |
PURPOSE: An III family nitride compound semiconductor light emitting device and a manufacturing method thereof are provided to execute an epitaxial growth without interruption due to a process executed outside an epitaxial growth device. CONSTITUTION: A III family nitride compound semiconductor light emitting device includes a substrate, a buffer layer(20), a first layer(30), a second layer(35), a light-emitting layer(40), a third layer(50), and an emission spectrum. The buffer layer is formed on the substrate. The first layer comprises a penetrating potential and is formed on the buffer layer as the single crystal layer of the III family nitride compound semiconductor. The second layer comprises the III family nitride compound semiconductor having the cross section which is parallel to the substrate. The third layer comprises the III family nitride compound semiconductor formed on the light-emitting layer.
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