| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which a first MOS transistor and a second MOS transistor which have superior characteristics are manufactured while manufacturing processes are simplified. SOLUTION: The semiconductor device is manufactured by forming an element isolation region which defines a first MOS transistor region and a second MOS transistor region on a semiconductor substrate, forming a first conductivity type well by ion-implanting the first conductivity type impurities into the first MOS transistor region and second MOS transistor region, forming an insulating gate region on the first MOS transistor and second MOS transistor region, and forming a symmetrical channel dose region below the insulating gate electrode of the first MOS transistor region and an asymmetrical channel dose region below the insulating gate electrode of the second MOS transistor region by ion-implanting the first conductivity type impurities from a plurality of directions inclined from a semiconductor substrate normal direction through a mask covering a drain region of the second MOS transistor. COPYRIGHT: (C)2011,JPO&INPIT
|
