发明名称 BACK GRINDING FILM AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a substrate film for back grinding having excellent dimension stability that hardly causes warpage on a thin semiconductor wafer in a back grinding process of the thin semiconductor wafer, and to provide a back grinding film including the substrate film for back grinding. SOLUTION: The substrate film for back grinding includes at least three layers including front and rear layers and an intermediate layer. In the substrate film, the front and rear layers are made of a resin composition containing 95-5 wt.% soft polyester resin and 5-95 wt.% polyester-based elastomer, and the intermediate layer is made of a resin composition containing 100-50 wt.% soft polyester resin and 0-50 wt.% polyester-based elastomer. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010225675(A) 申请公布日期 2010.10.07
申请号 JP20090068856 申请日期 2009.03.19
申请人 GUNZE LTD 发明人 SAGO SHIGERU;OKAGAWA MASAAKI
分类号 H01L21/304;B32B27/00;B32B27/36;C09J7/02 主分类号 H01L21/304
代理机构 代理人
主权项
地址