发明名称 STORAGE ELEMENT, METHOD OF MANUFACTURING SAME, AND SEMICONDUCTOR STORAGE DEVICE
摘要 Disclosed herein is a storage element including: a first electrode; a second electrode formed in a position opposed to the first electrode; and a variable-resistance layer formed so as to be interposed between the first electrode and the second electrode. The first electrode is a tubular object, and is formed so as to be thicker on an opposite side from the variable-resistance layer than on a side of the variable-resistance layer.
申请公布号 US2010252798(A1) 申请公布日期 2010.10.07
申请号 US20100729664 申请日期 2010.03.23
申请人 SONY CORPORATION 发明人 SUMINO JUN
分类号 H01L45/00;H01L21/02 主分类号 H01L45/00
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