SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME

摘要

A semiconductor device having a planarization layer that is comprised by an inorganic film and formed with recesses at regions where a conductive film is disposed. A first contact hole running through at least an interlayer insulating film is formed on a first interconnect layer, while a second contact hole running through at least the interlayer insulating film is formed on the conductive film in a manner which has the second contact hole passing through the inward side of a recess.