NITRIDE-BASED SEMICONDUCTOR ELEMENT AND PRODUCTION METHOD THEREFOR
摘要
<p>A nitride-based semiconductor element (100) is provided with a GaN substrate (10), which has an m-plane (12) surface; a semiconductor layered structure (20) formed on the m-plane (12) of the GaN substrate (10), and an electrode (30) formed on the semiconductor layered structure (20). The electrode (30) includes a Mg layer (32) and a Ag layer (34) formed on the Mg layer (32). The Mg layer (32) connects to the p-type semiconductor region of the semiconductor layered structure (20).</p>
