PHOTODIODE AND PHOTODIODE ARRAY

摘要

PROBLEM TO BE SOLVED: To provide photodiodes and photodiode arrays that are silicon photodiodes and silicon photodiode arrays and have sufficient spectral sensitivity characteristics in near-infrared wavelength bands.

SOLUTION: A P--type semiconductor substrate 20 includes first and second main surfaces 20a, 20b opposing each other, and a light sensitive region 21. The light sensitive region 21 includes an N+-type impurity region 23, a P+-type impurity region 25, and a region depleted when a bias voltage is applied in the P--type semiconductor substrate 20. Irregularities 10 are formed on the second main surface 20b of the P--type semiconductor substrate 20. An accumulation layer 37 is formed at the side of the second main surface 20b of the P--type semiconductor substrate 20. A region opposite to the light sensitive region 21 in the accumulation layer 37 is exposed optically.

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