| 摘要 |
Methods and structures for the electroplating on ultra-thin seed layers are disclosed. A dual layer structure is utilized, consisting of a thicker, highly conductive layer surrounding device structures. Within the device die, an ultra-thin seed layer is employed, which is electrically coupled to the conduction layer. Using this technique, electroplating of critical device structures can be carefully controlled and made uniform across the full diameter of the wafer. The technique also allow for the deployment of ultra-thin seed layers of varying thickness and composition in different locations within the circuit device, or in different die on the wafer.
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