发明名称 DRIVE CONTROL CIRCUIT OF POWER SEMICONDUCTOR ELEMENT, AND INTELLIGENT POWER MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a drive control circuit capable of stably operating a power semiconductor switching element, even when a supplied power supply voltage fluctuates. <P>SOLUTION: The drive control circuit 1 of a semiconductor switching element (IGBT) 2 includes a voltage division circuit 20, a drive unit 10 and a constant voltage circuit 30. The voltage division circuit 20 has a voltage division node ND which divides a power supply voltage VS supplied from a DC power supply 40 and takes out the voltage-divided power supply voltage VS. The voltage division node ND is connected to the emitter E of the IGBT 2. The drive unit 10 electrically connects a gate electrode G to any of the positive electrode side power supply node NP of the DC power source 40 and the voltage division node ND in response to a control signal SG input from outside, turning on/off the IGBT 2. The constant voltage circuit 30 is connected between the positive electrode side power supply node NP and the voltage division node ND, keeping the voltage between the nodes NP, ND constant. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010226835(A) 申请公布日期 2010.10.07
申请号 JP20090069905 申请日期 2009.03.23
申请人 MITSUBISHI ELECTRIC CORP 发明人 NISHIDA SHINYA;MIYAZAKI YUJI
分类号 H02M1/08;H03K17/56 主分类号 H02M1/08
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