METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To manufacture a group III nitride semiconductor which has small threading dislocation and high flatness. SOLUTION: On a surface of a sapphire substrate 10 on a side where unevenness is provided, a GaN layer 11 doped with Si is formed by a MOCVD method with a buffer layer interposed (Fig.1(a)). The GaN layer 11 has an Si concentration of 1×1018to 1×1020/cm3and a thickness of 1 μm. Then, a GaN layer 12 doped with Mg is formed on the GaN layer 11 by the MOCVD method (Fig.1(b)). The GaN layer 12 is formed under growth conditions similar to those when the GaN layer 11 is formed without changing growth conditions of temperature, pressure, etc. Further, the Mg concentration is 1×1017to 1×1020/cm3. The GaN layer 12 which is thus formed is crystal of good quality which has a low density of threading dislocation and high surface flatness. COPYRIGHT: (C)2011,JPO&INPIT