| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of producing a group III nitride semiconductor layer, which can reduce the generation of warping and increase the production yield. SOLUTION: The method includes: the step of forming a layer 11 of a carbide selected from titanium carbide, zirconium carbide, hafnium carbide, vanadium carbide or tantalum carbide on a base substrate 10; the step of growing a group III nitride semiconductor layer 12 on the carbide layer 11; and the step of eliminating the base substrate 10 by forming a crack in the group III nitride semiconductor layer 12 on the upper part of the carbide layer 11 to obtain the group III nitride semiconductor layer 12. The step of growing the group III nitride semiconductor layer 12 includes: the step of growing the first group III nitride semiconductor layer 121 by three-dimensional growth while growing facet structure on the upper part of carbide layer 11; and the step of forming the second group III nitride semiconductor layer 122 on the first group III nitride semiconductor layer 121 by two-dimensional growth. COPYRIGHT: (C)2011,JPO&INPIT
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