发明名称 METHODS OF FABRICATING RECESSED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTORS
摘要 A method of fabricating a semiconductor device includes forming a mask pattern on an active region of a substrate defined by an isolation region. The mask pattern includes an opening therein exposing a portion of the active region. The exposed portion of the active region is etched to define a preliminary gate trench therein including opposing sidewalls and a surface therebetween, where portions of the mask pattern extend to edges of the active region outside the preliminary gate trench. An annealing process is performed on the substrate to form a gate trench from the preliminary gate trench, and gate electrode is formed in the gate trench. The preliminary gate trench and the gate trench have a substantially similar width defined between the edges of the active region including the portions of the mask pattern thereon.
申请公布号 US2010255649(A1) 申请公布日期 2010.10.07
申请号 US20100754244 申请日期 2010.04.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KEUM-JOO;CHOI BO-WO;HWANG IN-SEAK
分类号 H01L21/336;H01L21/28 主分类号 H01L21/336
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