发明名称 |
METHODS OF FABRICATING RECESSED CHANNEL METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTORS |
摘要 |
A method of fabricating a semiconductor device includes forming a mask pattern on an active region of a substrate defined by an isolation region. The mask pattern includes an opening therein exposing a portion of the active region. The exposed portion of the active region is etched to define a preliminary gate trench therein including opposing sidewalls and a surface therebetween, where portions of the mask pattern extend to edges of the active region outside the preliminary gate trench. An annealing process is performed on the substrate to form a gate trench from the preliminary gate trench, and gate electrode is formed in the gate trench. The preliminary gate trench and the gate trench have a substantially similar width defined between the edges of the active region including the portions of the mask pattern thereon.
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申请公布号 |
US2010255649(A1) |
申请公布日期 |
2010.10.07 |
申请号 |
US20100754244 |
申请日期 |
2010.04.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KEUM-JOO;CHOI BO-WO;HWANG IN-SEAK |
分类号 |
H01L21/336;H01L21/28 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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