| 摘要 |
<p>A method and a body potential modulation circuit with anti process variation in the subthreshold integrated circuit are disclosed. The body potential modulation circuit includes an object MOS device (11), an induction MOS device (12) and a current-converting-voltage circuit (13). The induction current output by the induction MOS device is converted to the induction voltage by the current-converting-voltage circuit, the induction voltage is fed back to the body end of the object MOS device, and the body potential of the object MOS device is modulated.</p> |
