| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve performance such as switching speed of electronic devices, and to improve crystallinity of semiconductor substrates. <P>SOLUTION: The semiconductor substrate includes a base substrate, an insulting layer, and an Si crystal layer in this order. An inhibition layer for inhibiting crystal growth of a compound semiconductor is provided on the Si crystal layer. The inhibition layer includes an opening penetrating up to the Si crystal layer. A seed crystal is provided inside the opening. The compound semiconductor is subjected to lattice matching or pseudo lattice matching to the seed crystal. An electronic device includes a substrate, an insulating layer provided on the substrate, an Si crystal layer provided on the insulating layer, an inhibition layer that is provided on the Si crystal layer, inhibits the crystal growth of the compound semiconductor, and has an opening penetrating up to the Si crystal layer, a seed crystal provided inside the opening, a compound semiconductor subjected to lattice matching or pseudo lattice matching to the seed crystal, and a semiconductor device formed by the compound semiconductor. <P>COPYRIGHT: (C)2011,JPO&INPIT |
