发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which matches an access time of a large-capacity nonvolatile memory and an access time of a random access memory, and includes the large-capacity nonvolatile memory. <P>SOLUTION: The semiconductor storage device includes a flash memory, a clock synchronization type DRAM, a control circuit which is bound to the flash memory and clock synchronization type DRAM, and controls access to the clock synchronization type DRAM and flash memory, and a plurality of input/output terminals bound to the control circuit. Access to the flash memory through the input/output terminals is carried out through the clock synchronization type DRAM. <P>COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010225161(A) 申请公布日期 2010.10.07
申请号 JP20100091954 申请日期 2010.04.13
申请人 RENESAS ELECTRONICS CORP 发明人 MIURA SEISHI;AYUKAWA KAZUSHIGE
分类号 G06F12/06;G06F12/00;G06F12/16;G11C16/02;G11C29/04 主分类号 G06F12/06
代理机构 代理人
主权项
地址