| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide nonvolatile memory wherein the area is reduced as much as possible. <P>SOLUTION: The nonvolatile memory has at least one memory cell 1 which is provided with: resistance variable memory 4 wherein one end is connected to a first terminal to which a drive voltage is to be applied and the other end is connected to a second terminal 5; and a diode 6 wherein the cathode is connected to the second terminal and the anode is connected to a third terminal to which a grounding potential is to be applied. The memory cell outputs an output corresponding to the resistance state of the resistance variable memory is output from the second terminal. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
