GaN-BASED FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a GaN-based compound semiconductor device capable of operating with low ON resistance and a high breakdown voltage.

SOLUTION: The GaN-based field effect transistor includes a buffer layer formed on a substrate, a channel layer formed on the buffer layer, a drift layer formed on the channel layer and having a hollowed recess portion partially reaching the channel layer, a source electrode and a drain electrode arranged on the drift layer, an insulating film formed on an internal surface of the recess portion formed in the drift layer and a surface of the drift layer, and a gate electrode formed on the insulating film and having a field plate portion. The drift layer has an electric field relaxation region made of an n-type GaN-based compound semiconductor layer of 5×1013cm-2to 1×1014cm-2in sheet carrier density between the recess portion and drain electrode, and the insulating film formed on the electric field relaxation region of the drift layer is≥300 nm thick.

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