发明名称 |
TUNNEL FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SAME |
摘要 |
A TFET includes a source region (110, 210), a drain region (120, 220), a channel region (130, 230) between the source region and the drain region, and a gate region (140, 240) adjacent to the channel region. The source region contains a first compound semiconductor including a first Group III material and a first Group V material, and the channel region contains a second compound semiconductor including a second Group III material and a second Group V material. The drain region may contain a third compound semiconductor including a third Group III material and a third Group V material. |
申请公布号 |
WO2010078054(A3) |
申请公布日期 |
2010.10.07 |
申请号 |
WO2009US68550 |
申请日期 |
2009.12.17 |
申请人 |
INTEL CORPORATION;GOEL, NITI;TSAI, WILMAN;KAVALIEROS, JACK |
发明人 |
GOEL, NITI;TSAI, WILMAN;KAVALIEROS, JACK |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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