发明名称 Non-Volatile Memory Device with Plural Reference Cells, and Method of Setting the Reference Cells
摘要 A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.
申请公布号 US2010254207(A1) 申请公布日期 2010.10.07
申请号 US20100725370 申请日期 2010.03.16
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 LIU XIAN;HEINZ MICHAEL JAMES;TAM EUGENE JINGLUN;DOAN MICHAEL K.;KOTOV ALEXANDER;DANG THO NGOC;FRAYER JACK EDWARD;YUN JUNG HEE;VU THUAN T.
分类号 G11C7/00 主分类号 G11C7/00
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