METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing group III nitride semiconductor substrate capable of obtaining a group III nitride semiconductor substrate without requiring time and efforts.

SOLUTION: The method of manufacturing group III nitride semiconductor substrate comprises: a process of forming a carbon film as a first film 11 on a base substrate 10; a process of forming a titanium carbide layer 12 on the first film 11; a process of nitriding the titanium carbide layer 12; a process of epitaxially growing a GaN semiconductor layer on the upper part of the nitrided titanium carbide layer; and a process of removing the base substrate 10 from the GaN semiconductor layer to obtain a GaN semiconductor substrate.

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