| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a wafer which has little variation in resistivity and in which the occurrence of oxygen deposits is extremely suppressed even after it is allowed to pass through an IGBT (Insulated Gate Bipolar Transistor) manufacturing process. SOLUTION: In a method for manufacturing a silicon single crystal wafer for IGBT, obtained by growing a silicon single crystal by a Czochralski method, the single crystal having interstitial oxygen concentration of≤6×10<SP>17</SP>atoms/cm<SP>3</SP>is grown under such conditions that the magnetic field intensity is≥2,000 gauss, the number of revolutions of a quarts crucible is≤1.5 rpm, the number of revolutions of the crystal is≤7.0 rpm, and the pulling speed of the silicon single crystal is set to a pulling speed at which the silicon single crystal free from dislocation cluster defects can be pulled. COPYRIGHT: (C)2011,JPO&INPIT |
