| 摘要 |
PROBLEM TO BE SOLVED: To prevent stress deterioration and characteristics variation of an embedded type laser diode. SOLUTION: A current constriction layer 18 is made to have a multilayer structure and the averaging of the Al composition value of the current constriction layer 18 is facilitated. Then, the average Al composition value of a ridge portion 9 and the average Al composition value of the current constriction layer 18 are made to be equal. As a result, since immanent stress which is applied to an active layer 3 is made to be a minimum value and stress variation caused by temperature variation in an element can be controlled, the deterioration of a laser diode chip caused by stress can be prevented and the stress deterioration and the characteristics variation of the element can be reduced. COPYRIGHT: (C)2011,JPO&INPIT
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