| 摘要 |
PROBLEM TO BE SOLVED: To form a recycled substrate of a SiC single crystal substrate at a low cost within a short time without forming a stopper layer, and to reuse the same. SOLUTION: A method for forming the recycled substrate includes: a first step of preparing the silicon carbide single crystal substrate 11 equipped with an AlN layer 13 and a GaN layer 15 successively epitaxially grown on a substrate surface 11a; and a second step of removing the GaN layer by subjecting the silicon carbide single crystal substrate to an annealing treatment in a hydrogen atmosphere. COPYRIGHT: (C)2011,JPO&INPIT
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