| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device hardly causing deterioration in the vicinity of an interface between an end face of a resonator of a semiconductor laser and a reflective film, low in a threshold current, and high in a yield. SOLUTION: A SiO<SB>2</SB>film 40 having a thickness ofλ/2 (λis a wavelength in a medium) is arranged tightly to an end face of a resonator, and dielectric double layered films 42 each consisting of an a-Si film 42a as a first layer adhering tightly to the SiO<SB>2</SB>film 40 and having a thickness ofλ/4 and a SiO<SB>2</SB>film 42b as a second layer having a thickness ofλ/4 are appropriately stacked on the SiO<SB>2</SB>film 40, whereby a front high-reflectivity film 28 or a rear high-reflectivity film 30 is formed. COPYRIGHT: (C)2011,JPO&INPIT
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