| 发明名称 |
GAS BARRIER FILM, ELECTRONIC DEVICE INCLUDING SAME, GAS BARRIER BAG, AND METHOD FOR MANUFACTURING GAS BARRIER FILM |
| 摘要 |
A gas barrier film wherein gas barrier layers (2) in contact with both main surfaces of a plastic film (1) are SiCNFH layers formed by catalyst CVD and satisfy the conditions 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, 0.04<I(NH)/I(SiN)<0.08, and 0.05<I(CF)/I(SiN)<0.3, or SiOCNH layers and satisfy the conditions 0.12)/I(NH)<8, or SiCNH layers and satisfy the conditions 0.01<I(SiH)/I(SiN)<0.05, 0.00<I(CH)/I(SiN)<0.07, and 0.04<I(NH)/I(SiN)<0.08. I represents the peak intensity of the Fourier-transform infrared spectrum relating to the atomic bond shown in the parentheses after I. |
| 申请公布号 |
WO2010113693(A1) |
申请公布日期 |
2010.10.07 |
| 申请号 |
WO2010JP54930 |
申请日期 |
2010.03.23 |
| 申请人 |
MATERIAL DESIGN FACTORY CO., LTD.;NAKAYAMA, HIROSHI |
发明人 |
NAKAYAMA, HIROSHI |
| 分类号 |
C23C16/42;B32B9/00;B65D65/40;H01L31/042;H01L51/50;H05B33/04 |
主分类号 |
C23C16/42 |
| 代理机构 |
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