III-NITRIDE LIGHT EMITTING DEVICE INCLUDING POROUS SEMICONDUCTOR LAYER

摘要

A semiconductor structure comprising a Ill-nitride light emitting layer (34) disposed between an n-type region (32) and a p-type region (36) is grown over a porous Ill-nitride region (16, 54). A III -nitride layer (26, 56) comprising InN is disposed between the light emitting layer and the porous Ill-nitride region. Since the Ill-nitride layer comprising InN is grown on the porous region, the Ill-nitride layer comprising InN may be at least partially relaxed, i.e. the III -nitride layer comprising InN may have an in-plane lattice constant larger than an in-plane lattice constant of a conventional GaN layer grown on sapphire.