| 摘要 |
<p>The invention relates to nanoelectronics, more specifically to non-volatile electrically erasable programmable read-only memories (EEPROM Flash memory). EEPROM Flash memory currently has a speed that is relatively slow in comparison to random access memory (DRAM), being equal, depending on the size of the memory, to tens of minutes. This is related primarily to the sequential programming of EEPROM memory cells. The invention makes it possible to increase EEPROM speed significantly as a result of a unique electric circuit for the memory cell, the functionally integrated structure of the cell, and a two-stage method for programming said cell.</p> |
