| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method thereof for suppressing a drop in yield in manufacture to overcome the problem that the yield in manufacture may drop in manufacturing a semiconductor device by performing wafer burn-in while covering with an insulating resin an electrode terminal of a semiconductor integrated circuit element determined to be defect by performing an electric characteristic test on the semiconductor integrated circuit element of a semiconductor wafer. <P>SOLUTION: The semiconductor device includes a semiconductor integrated circuit element. In the semiconductor integrated circuit element, a semiconductor integrated circuit 5 is formed at the center on the upper surface of a semiconductor substrate 3, and a plurality of connecting electrode terminals 71 and inspecting electrode terminals 73 are provided on the periphery of the upper surface of the semiconductor substrate 3. A protective film 9 for exposing the upper surface of electrode terminal is provided on the upper surface of the semiconductor substrate 3. The inspecting electrode terminal 73 includes a thin-wall part 74 and thick-wall part 72. An upper surface 74a of the thin-wall part is positioned lower than the upper surface 72a of the thick-wall part (or the upper surface of the connecting electrode terminal 71). <P>COPYRIGHT: (C)2011,JPO&INPIT |
