| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has low on-resistance and sufficient switching characteristics and obtains a high breakdown voltage in both forward and backward directions. <P>SOLUTION: An interval c1 between first gate electrodes 15a and an interval c2 between second gate electrodes 15b are set so that a depletion layer extending toward a second main surface side from a first main surface side in an N-type base layer 10 stops between the adjacent second gate electrodes 15b and it does not reach the second P-type base layer 13b when a forward voltage is applied while a first main electrode 11 and the first gate electrode 15a are short-circuited and a second main electrode 12 and the second gate electrode 15b are short-circuited, and a depletion layer extending toward the first main surface side from the second main surface side in the N-type base layer 10 stops between the adjacent first gate electrodes 15a and does not reach the first P-type base layer 13a when a backward voltage is applied. <P>COPYRIGHT: (C)2011,JPO&INPIT |
