| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To achieve high speed write of multivalued data in a nonvolatile semiconductor memory device using a variable resistance element. <P>SOLUTION: A nonvolatile semiconductor memory device includes: a memory cell array which has a plurality of first and second wiring intersecting one another and memory cells provided at respective intersections between the first wiring and the second wiring, wherein the memory cells comprises variable resistance elements, and a page is configured by the predetermined numbers of the memory cells sharing the same first wiring; a control circuit which selects a page to be written based on a writing address and supply constant voltage to the first wiring belonging to the selected page; a writing-voltage generating circuit generating and outputting a plurality of kinds of writing voltage for changing a resistance value of the variable resistance element to three stages or more based on the writing data of three or more values; and a selecting circuit selecting a page to be written based on the writing address and supplying writing voltage generated and output from the writing-voltage generating circuit to the predetermined numbers of the respective second wiring belonging to the selected page. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
