| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer for a solid-state imaging element, the method easily forming a gettering sink in a short time and never causing a concern for heavy-metal contamination in forming the gettering sink. SOLUTION: A gettering sink 4 is formed by a multiphoton absorption step, and thereafter a silicon wafer 2 is subjected to mirror-surface polishing (a polishing step as shown in Fig.4(b)). By the polishing step of subjecting the silicon wafer 2 to mirror-surface polishing, a minute flaw (abrasion) on one surface 2a of the silicon wafer 2 caused by irradiation of a laser beam in the multiphoton absorption step being a previous step is perfectly removed (as shown in Fig.4(b)). COPYRIGHT: (C)2011,JPO&INPIT |
