| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin transistor, with a low interface resistance between a source/drain made of a ferromagnetic material and an organic channel, which achieves a good transistor operation, and to provide a logic circuit device. SOLUTION: The spin transistor includes: a substrate 5, a channel layer 7 arranged on the substrate, a first electrode 10 and a second electrode 20 both containing a ferromagnetic material arranged on the channel layer, a gate electrode 8 arranged between the first electrode and the second electrode on the channel layer, and a first insertion layer 30 and a second insertion layer 40 arranged between the channel layer and the first electrode and between the channel layer and the second electrode, respectively. The channel layer is made of a carbon material that has a six-membered ring network structure. The first and second insertion layers include: at least one of Ge containing P, Ge containing B, Pd, Co, and Rh; or one of Li, Na, and Ca; or one of their compounds. COPYRIGHT: (C)2011,JPO&INPIT
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