SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which has a good-quality structure in which memory cells are arranged three-dimensionally and to provide a method for manufacturing it. SOLUTION: The method includes: a step of alternately forming a non-doped amorphous silicon layer and an amorphous silicon layer 106 containing boron on a substrate 100; a step of forming a slit by etching the amorphous silicon layer; a step of forming a sacrificial film within the slit; a step of forming a hole by etching the amorphous silicon layer; a step of forming a gap by etching the non-doped amorphous silicon layer; a step of forming an interlayer insulating film 107 within the gap and the hole; a step of forming a hole 115 by etching the interlayer insulating film 107 formed within the hole; a step of forming a block insulating film within the hole 115; a step of forming a charge storage insulating film; a step of forming a tunnel insulating film; and a step of forming a semiconductor region. COPYRIGHT: (C)2011,JPO&INPIT