| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a laminated structure which reduces variations in memory cell characteristics generated from one memory cell layer to the other by making a lamination order of memory cell layers of the memory cell the same. <P>SOLUTION: The nonvolatile semiconductor memory device includes a plurality of pieces first and second wiring that intersect each other and a memory cell array composed by laminating a plurality of memory cell layers having memory cells prepared at each intersection of the plurality of pieces of first and second wiring. The memory cell has a variable resistive element and a non-ohmic element laminated in a lamination direction of the memory cell array where the lamination order of the variable resistive element and the non-ohmic element of a memory cell in a given memory cell layer and the lamination order of the variable resistive element and non-ohmic element of a memory cell in another given memory cell layer are the same. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
