| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a Cu alloy film for reducing resistance in a process temperature region of a wiring film of a flat display device or the like, and a sputtering target material for forming the Cu alloy film. <P>SOLUTION: The Cu alloy film for the wiring film contains B of 0.1-1.0 atom% and further one or more elements selected from Mg, Ti, Zr, Mo, Al, and Si of 0.1-2.0 atom%, and the balance Cu with inevitable impurities as additive elements. The sputtering target material is used for forming the Cu alloy film for the wiring film. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
