| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that although high-Pb solder is used for a connection member of a semiconductor device requiring high heat resistance, in particular, a semiconductor device used for an on-vehicle AC generator, a Pb-free connection member needs to be used for reduction in environmental load and existent Pb-free solder, however, causes voids to be formed through interfacial reaction when used at a high temperature for connection and thereby can not avoid a connection defect. <P>SOLUTION: The present invention relates to a semiconductor device having heat resistance of≥200°C by suppressing interfacial reaction by combining Ni-based plating with Sn-based solder containing a Cu6Sn5 phase at a room temperature to the temperature of 200°C for a connection method with heat resistance of 200°C. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
