SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device equipped with MISFET which provides the longest life. SOLUTION: The semiconductor device is provided with MISFET having: a semiconductor substrate 1 which has a semiconductor region 2 formed thereon; a source region 5a and a drain region 5b formed separately from each other in the semiconductor region; a gate insulating film 10 having a metal oxide layer 12 which is formed on a semiconductor region 3 between the source region and the drain region and which contains metal and oxygen; and a gate electrode 16 formed on the gate insulating film. The metal contained in the metal oxide layer is at least one chosen from Hf and Zr. Further, at least one element chosen from the elements Ru, Cr, Os, V, Fe, Tc, Nb, Ta is added to the metal oxide layer. The metal oxide layer has a charge trap which captures or emits a charge formed by the addition of the element. The density of the element in the metal oxide layer ranges from 1×1015cm-3to 2.96×1020cm-3. The charge trap is distributed so that it has a peak in the semiconductor region side rather than the center of the metal oxide layer. COPYRIGHT: (C)2011,JPO&INPIT