| 摘要 |
PROBLEM TO BE SOLVED: To improve performance such as switching speed of electronic devices, and to improve crystallinity of semiconductor substrates. SOLUTION: The semiconductor substrate includes a base substrate, an insulting layer, and an Si<SB>x</SB>Ge<SB>1-x</SB>crystal layer in this order. The semiconductor substrate also includes an inhibition layer provided on the Si<SB>x</SB>Ge<SB>1-x</SB>crystal layer, and a compound semiconductor that is subjected to lattice matching or pseudo lattice matching to the Si<SB>x</SB>Ge<SB>1-x</SB>crystal layer. The inhibition layer includes an opening penetrating up to the Si<SB>x</SB>Ge<SB>1-x</SB>crystal layer, and inhibits crystal growth of a compound semiconductor. The semiconductor substrate includes a compound semiconductor that is subjected to lattice matching or pseudo lattice matching to the Si<SB>x</SB>Ge<SB>1-x</SB>crystal layer inside the opening, and a semiconductor device formed by the compound semiconductor. COPYRIGHT: (C)2011,JPO&INPIT |
