| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thermal airflow sensor in a diaphragm structure having a small decrease in breaking strength due to microcrack growth. <P>SOLUTION: The thermal airflow sensor includes a resistor functioning as a heater and a diaphragm formed by a plurality of layers of insulation films while covering the resistor with a semiconductor substrate 101 as a support. In the thermal airflow sensor, at least two layers (102, 104) of silicon nitride films are formed on the insulation films of the diaphragm toward the side of the semiconductor substrate 101 from the resistor, and the lowest layer at the side of the semiconductor substrate 101 includes the silicon nitride film 102. In the thermal airflow sensor, a silicon oxide film 103 having a film thickness of≥50 nm is formed on the silicon nitride film 102 on the lowest layer at the side of the semiconductor substrate 101. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
