发明名称 HEAT TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a heat treatment apparatus for uniforming the in-plane temperature distribution of a substrate to be preheated by a halogen lamp. SOLUTION: A plurality of bumps 75 are erected on the upper surface of a quartz holding plate 74. A semiconductor wafer W is supported in a horizontal posture at prescribed interval from the upper surface of the holding plate 74 by the plurality of bumps 75. A temperature compensation ring 76 is arranged in a ring shape close to the end edge of the semiconductor wafer W on the upper surface of the holding plate 74, and formed of silicon carbide with infrared absorption higher than quartz. When the semiconductor wafer W is preheated by the halogen lamp, the temperature of the temperature compensation ring 76 also rises, so that heat lost from the end edge of the semiconductor wafer W during preheating is compensated by the temperature compensation ring 76. Consequently, the in-plane temperature distribution of the preheated semiconductor wafer W is uniformed. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010225645(A) 申请公布日期 2010.10.07
申请号 JP20090068375 申请日期 2009.03.19
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KOBAYASHI IPPEI
分类号 H01L21/26;H01L21/683 主分类号 H01L21/26
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